Heterostructures

We have over twenty five years experience in MOSVD epitaxial grooving. Currently possible to grow heterostructures as follows: Waveguide material / Active region material/ Substrate.

Heterostructures for Laser Diode

Wavelength, nm	Epitaxial layer material
640-700	AlGaInP/GaInP/GaAs
730-790	AlGaInP/GaInP/GaInAsP/GaAs
800-850	AlGaAs/GaAs; AlGaInP/GaInP/GaInAsP/GaAs
940-980	AlGaAs/GaInAs/GaAs
1060	AlGaAs/GaInAs/GaAs
1300-1550	AlGaAs/GaInAs/ InP

LED

Wavelength, nm	Epitaxial layer material
610-680	AlGaInP/GaInP/AlGaAs/GaAs; GaAsP/GaAs
570	AlGaInP/GaInP/GaP; /AlGaInP/GaInP/GaAs
810-850	AlGAAs/GaAs; AlGaInP/ GaInP/ AlGaAs/ GaAs
940-980	AlGaAs/ GaInAs/ GaAs

HBLED

Wavelength, nm	Epitaxial layer material
610-680	GaP/AlInP/AlGaInP/GaAs
570	GaP/AlInP/AlGaInP/GaAs

Photocathodes

Wavelength, nm	Epitaxial layer material
500-900	AlGaAs/GaAs/AlGaAs/GaAs
800-1600	AlInAs/GaInAs/InP

Photo detectors

Wavelength, nm	Epitaxial layer material
800-1700	AlInAs/ GaInAs/ AlInAs/InP

Solar Cells

Wavelength, nm	Epitaxial layer material
---	AlInP/GaInP/GaAs/InGaAs/Ge